Rengel, Raul: search on Z-Library

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1

Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

Rengel, Raúl, Pascual, Elena, Íñiguez-de-la-Torre, Ignacio, Martín, María J., Vasallo, Beatriz G.

Journal:

Journal of Science Education and Technology

Year:

2019

Language:

english

File:

PDF, 241 KB

english, 2019

2

Towards the nanoscale: influence of scaling on the electronic transport and small-signal behaviour of MOSFETs

Rengel, Raúl, Pardo, Daniel, Martín, María Jesús

Journal:

Year:

2004

Language:

english

File:

PDF, 1.08 MB

english, 2004

3

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

Raul Rengel, Martin, M.J., Gonzalez, T., Mateos, J., Pardo, D., Dambrine, G., Raskin, J.-P., Danneville, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 757 KB

english, 2006

4

Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

Rengel, Raúl, Martin, María J., Danneville, François

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 156 KB

english, 2011

5

A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs

Rengel, Raúl, Martín, María J, Dambrine, Gilles, Danneville, François

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 239 KB

english, 2006

6

RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

Maria J. Martin, Elena Pascual, Raúl Rengel

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.03 MB

english, 2012

7

ON THE INFLUENCE OF SPACE-QUANTIZATION EFFECTS ON THE RF NOISE BEHAVIOUR OF DG MOSFETS

RENGEL, RAUL, GONZALEZ, TOMAS, MARTIN, MARIA J.

Journal:

Fluctuation and Noise Letters

Year:

2004

Language:

english

File:

PDF, 321 KB

english, 2004

8

Noise temperature in graphene at high frequencies

Rengel, Raúl, Iglesias, José M, Pascual, Elena, Martín, María J

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

9

Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research

Pascual, Elena, Martín, María J, Rengel, Raúl, Larrieu, Guilhem, Dubois, Emmanuel

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 285 KB

english, 2009

10

[IEEE 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) - Playa del Carmen, Mexico (2012.03.14-2012.03.17)] 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) - Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs

Couso, Carlos, Pascual, Elena, Galeote, Jose M., Martin, Maria J., Rengel, Raul

Year:

2012

Language:

english

File:

PDF, 608 KB

english, 2012

11

SPIE Proceedings [SPIE Second International Symposium on Fluctuations and Noise - Maspalomas, Gran Canaria Island, Spain (Tuesday 25 May 2004)] Noise in Devices and Circuits II - Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise

Danneville, Francois, Rengel, Raul, Gonzalez, Tomas, Bonani, Fabrizio, Deen, M. Jamal, Martin, Maria J., Levinshtein, Michael E.

Year:

2004

Language:

english

File:

PDF, 287 KB

english, 2004

12

[IEEE 2011 Spanish Conference on Electron Devices (CDE) - Palma de Mallorca, Spain (2011.02.8-2011.02.11)] Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 - Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

Martin, Maria J., Rengel, Raul, Galeote, Jose M., de Souza, Michelly, Pavanello, Marcelo A.

Year:

2011

Language:

english

File:

PDF, 124 KB

english, 2011

13

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Space quantization effects in double gate SB-MOSFETs: Role of the active layer thickness

Garcia, Jose S., Martin, Maria J., Rengel, Raul

Year:

2013

Language:

english

File:

PDF, 868 KB

english, 2013

14

[IEEE 2013 International Conference on Noise and Fluctuations (ICNF) - Montpellier, France (2013.06.24-2013.06.28)] 2013 22nd International Conference on Noise and Fluctuations (ICNF) - Velocity and momentum fluctuations in suspended monolayer graphene

Martin, Maria J., Couso, Carlos, Rengel, Raul

Year:

2013

Language:

english

File:

PDF, 447 KB

english, 2013

15

Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene

Iglesias, José M., Rengel, Raul, Hamham, El Mokhtar, Pascual, Elena, Martin, Maria

Journal:

Journal of Physics D Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.10 MB

english, 2017

16

[IEEE 2017 Conference on Lasers and Electro-Optics Europe (CLEO/Europe) & European Quantum Electronics Conference (EQEC) - Munich (2017.6.25-2017.6.29)] 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - High order harmonic generation in graphene

Zurron, Oscar, Iglesias, Jose Manuel, Rengel, Raul, Martin, Maria Jesus, Plaja, Luis

Year:

2017

File:

PDF, 583 KB

2017

17

[IEEE 2015 10th Spanish Conference on Electron Devices (CDE) - Aranjuez - Madrid, Spain (2015.2.11-2015.2.13)] 2015 10th Spanish Conference on Electron Devices (CDE) - Monte Carlo modeling of mobility and microscopic charge transport in supported graphene

Rengel, Raul, Iglesias, Jose M., Pascual, Elena, Martin, Maria J.

Year:

2015

Language:

english

File:

PDF, 1.80 MB

english, 2015

18

SPIE Proceedings [SPIE SPIE's First International Symposium on Fluctuations and Noise - Santa Fe, NM (Sunday 1 June 2003)] Noise in Devices and Circuits - High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation

Rengel, Raul, Deen, M. Jamal, Celik-Butler, Zeynep, Mateos, Javier, Pardo, Daniel, Levinshtein, Michael E., Gonzalez, Tomas, Martin, Maria Jesus, Dambrine, Gilles, Danneville, Francois, Raskin, Jean-P

Year:

2003

Language:

english

File:

PDF, 150 KB

english, 2003

19

[IEEE 2017 Spanish Conference on Electron Devices (CDE) - Barcelona, Spain (2017.2.8-2017.2.10)] 2017 Spanish Conference on Electron Devices (CDE) - A combined Monte Carlo-balance equations investigation of the high frequency response of graphene

Rengel, Raul, Iglesias, Jose M., Pascual, Elena, Martin, Maria J.

Year:

2017

Language:

english

File:

PDF, 476 KB

english, 2017

20

Electronic transport and noise characterization in MoS2

Pascual Corral, Elena, Iglesias, JosÃ© M., Martin, Maria J, Rengel, Raul

Journal:

Semiconductor Science and Technology

Year:

2020

Language:

english

File:

PDF, 4.02 MB

english, 2020

21

[IEEE 2007 Spanish Conference on Electron Devices - Madrid, Spain (2007.01.31-2007.02.2)] 2007 Spanish Conference on Electron Devices - Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

Martin, Maria J., Rengel, Raul, Pascual, Elena, Gonzalez, Tomas

Year:

2007

Language:

english

File:

PDF, 2.74 MB

english, 2007

22

[IEEE 2015 10th Spanish Conference on Electron Devices (CDE) - Aranjuez - Madrid, Spain (2015.2.11-2015.2.13)] 2015 10th Spanish Conference on Electron Devices (CDE) - Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs

Iglesias, Jose M., Martin, Maria J., Pascual, Elena, Rengel, Raul

Year:

2015

Language:

english

File:

PDF, 703 KB

english, 2015

23

A balance equations approach for the study of the dynamic response and electronic noise in graphene

Rengel, Raúl, Iglesias, José M., Pascual, Elena, Martín, María J.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.65 MB

english, 2017

24

[IEEE 2011 Spanish Conference on Electron Devices (CDE) - Palma de Mallorca, Spain (2011.02.8-2011.02.11)] Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 - A Monte Carlo model for the study of n-type strained Silicon Schottky diodes

Galeote, Jose Mo, Rengel, Raul, Pascual, Elena, Martin, Maria J.

Year:

2011

Language:

english

File:

PDF, 555 KB

english, 2011

25

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Ultrafast Phenomena and Nanophotonics XXI - High harmonic generation in graphene: temporal and spectral properties

Betz, Markus, Elezzabi, Abdulhakem Y., Zurrón, Óscar, Iglesias, Jose Manuel, Rengel, Raúl, Martín, María Jesús, Plaja, Luis

Year:

2017

Language:

english

File:

PDF, 673 KB

english, 2017

26

Interband scattering-induced ambipolar transport in graphene

Iglesias, José M., Pascual, Elena, Hamham, El Mokhtar, Martin, Maria J, Rengel, Raul

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 2.49 MB

english, 2019

27

Supervised Coursework as a Way of Improving Motivation in the Learning of Digital Electronics

Rengel, Raúl, Martin, María J., Vasallo, Beatriz G.

Journal:

IEEE Transactions on Education

Year:

2012

Language:

english

File:

PDF, 275 KB

english, 2012

28

Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

Pascual, Elena, Rengel, Raúl, Martín, María J

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 259 KB

english, 2007

29

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

Feijoo, Pedro C, Pasadas, Francisco, Iglesias, José M, Martín, María J, Rengel, Raúl, Li, Changfeng, Kim, Wonjae, Riikonen, Juha, Lipsanen, Harri, Jiménez, David

Journal:

Year:

2017

Language:

english

File:

PDF, 2.14 MB

english, 2017

30

Impact of the hot phonon effect on electronic transport in monolayer silicene

Hamham, El Mokhtar, Iglesias, José M., Pascual, Elena, Martin, Maria J, Rengel, Raul

Journal:

Journal of Physics D Applied Physics

Year:

2018

Language:

english

File:

PDF, 679 KB

english, 2018

31

[IEEE 2009 Spanish Conference on Electron Devices (CDE) - Santiago de Compostela, Spain (2009.02.11-2009.02.13)] 2009 Spanish Conference on Electron Devices - Comparative study of Laterally Asymmetric Channel and conventional MOSFETs

Rengel, Raul, Martin, Maria J., Danneville, Francois

Year:

2009

Language:

english

File:

PDF, 223 KB

english, 2009

32

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - A Monte Carlo Study of electron transport in suspended monolayer graphene

Rengel, Raul, Couso, Carlos, Martin, Maria J.

Year:

2013

Language:

english

File:

PDF, 267 KB

english, 2013

33

[IEEE 2007 Spanish Conference on Electron Devices - Madrid, Spain (2007.01.31-2007.02.2)] 2007 Spanish Conference on Electron Devices - Monte Carlo analysis of tunneling and thermionic transport in a reverse biased Schottky diode

Pascual, Elena, Rengel, Raul, Martin, Maria J.

Year:

2007

Language:

english

File:

PDF, 3.11 MB

english, 2007

34

[IEEE 2009 Spanish Conference on Electron Devices (CDE) - Santiago de Compostela, Spain (2009.02.11-2009.02.13)] 2009 Spanish Conference on Electron Devices - Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

Pascual, Elena, Rengel, Raul, Martin, Maria J.

Year:

2009

Language:

english

File:

PDF, 3.83 MB

english, 2009

35

Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

Martin-Martinez, Maria J., Couso, Carlos, Pascual, Elena, Rengel, Raul

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.09 MB

english, 2014

36

SPIE Proceedings [SPIE Second International Symposium on Fluctuations and Noise - Maspalomas, Gran Canaria Island, Spain (Tuesday 25 May 2004)] Noise in Devices and Circuits II - Influence of 2D electrostatic effects on the high-frequency noise behavior of sub-100-nm scaled MOSFETs

Danneville, Francois, Rengel, Raul, Pardo, Daniel, Bonani, Fabrizio, Deen, M. Jamal, Martin, Maria J., Levinshtein, Michael E.

Year:

2004

Language:

english

File:

PDF, 388 KB

english, 2004

37

Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime

Rengel, Raúl, Martín, María J.

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2014

Language:

english

File:

PDF, 1.18 MB

english, 2014

38

[IEEE 2011 21st International Conference on Noise and Fluctuations (ICNF) - Toronto, ON, Canada (2011.06.12-2011.06.16)] 2011 21st International Conference on Noise and Fluctuations - Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET

Pascual, Elena, Rengel, Raul, Martin, Maria J.

Year:

2011

Language:

english

File:

PDF, 277 KB

english, 2011

39

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport

Causa, Carlos, Rengel, Raul, Martin, Maria J.

Year:

2013

Language:

english

File:

PDF, 728 KB

english, 2013

40

Monte Carlo investigation of noise and high-order harmonic extraction in graphene

Iglesias, José M., Hamham, El Mokhtar, Pascual, Elena, Rengel, Raul

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 3.18 MB

english, 2018

41

Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport

Rengel, Raul, Iglesias, José M., Hamham, El Mokhtar, Martin, Maria J

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.24 MB

english, 2018

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